| Type: | Diffuse Reflection Type Photoelectric Sensor |
|---|---|
| Output Signal Type: | Digital Type |
| Production Process: | Normal Wirewound |
| Material: | Metal |
| Feature: | SemiConductor |
| IP Rating: | IP67 |
| Samples: |
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| Customization: |
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| Diffuse-reflective Type | Retro-reflective Type | Through-beam | |
| Model: | S18SN6D | S18SN6L | S186E |
| Signal output: | NPN,26.4VDC Max.,load current:100 mA | Emitter | |
| Sensing Distance |
100 mm | 2m | 20 m |
| Power Supply: | 10 to 30 VDC±10%, ripple (p-p): 10% max | ||
| Current consumption: |
30 mA | 25 mA | |
| Light source: | Infrared LED | ||
| Output Current: |
150 mA | ||
| Response time: |
3 ms | ||
| Ambient temperature: |
-40 ºC..70ºC | ||
| Degree of protection: |
IP67 | ||
| Connection: | 4 wires (standard length: 2 m) | 2 wires,2 m length | |
| Housing: | PBT | ||
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